PDTC124XS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTC124XS
Código: TC124X
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-54
Búsqueda de reemplazo de transistor bipolar PDTC124XS
PDTC124XS Datasheet (PDF)
pdtc124xef pdtc124xk pdtc124xs.pdf
PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59
pdtc124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha
pdtc124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage
pdtc124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha
pdtc124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage
pdtc124x.pdf
PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SC2208
History: 2SC2208
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