PDTC124XS Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTC124XS
SMD Transistor Code: TC124X
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-54
PDTC124XS Transistor Equivalent Substitute - Cross-Reference Search
PDTC124XS Datasheet (PDF)
pdtc124xef pdtc124xk pdtc124xs.pdf
PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59
pdtc124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha
pdtc124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage
pdtc124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha
pdtc124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage
pdtc124x.pdf
PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
