PDTD113EK Todos los transistores

 

PDTD113EK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTD113EK
   Código: E1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SOT-346

 Búsqueda de reemplazo de transistor bipolar PDTD113EK

 

PDTD113EK Datasheet (PDF)

 ..1. Size:123K  nxp
pdtd113ek pdtd113es.pdf

PDTD113EK
PDTD113EK

PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT

 6.1. Size:123K  philips
pdtd113e ser.pdf

PDTD113EK
PDTD113EK

PDTD113E seriesNPN 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA NPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTD113EK SOT346 SC-59A TO-236 PDTB113EKPDTD113ES[1] SOT54 SC-43A TO-92 PDT

 7.1. Size:64K  philips
pdtd113zt.pdf

PDTD113EK
PDTD113EK

PDTD113ZTNPN 500 mA, 50 V resistor-equipped transistor;R1 = 1 k, R2 = 10 kRev. 02 23 March 2009 Product data sheet1. Product profile1.1 General descriptionNPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-MountedDevice (SMD) plastic package.PNP complement: PDTB113ZT.1.2 Features Built-in bias resistors Reduces component count Simplifies circuit des

 8.1. Size:49K  motorola
pdtd114et 4.pdf

PDTD113EK
PDTD113EK

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 8.2. Size:49K  philips
pdtd114et 4.pdf

PDTD113EK
PDTD113EK

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: ECG322 | EN3962 | 2N4906 | 50C02SS-TL-E

 

 
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