2SA107
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA107
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08
W
Tensión colector-base (Vcb): 6
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 0.01
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO44
Búsqueda de reemplazo de transistor bipolar 2SA107
2SA107
Datasheet (PDF)
0.5. Size:149K jmnic
2sa1079.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base
0.6. Size:128K jmnic
2sa1075 2sa1076.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base Coll
0.7. Size:156K jmnic
2sa1073.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
0.8. Size:150K jmnic
2sa1078.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
0.9. Size:156K jmnic
2sa1072.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 s
0.10. Size:152K jmnic
2sa1077.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou
0.11. Size:149K jmnic
2sa1074.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col
0.12. Size:219K inchange semiconductor
2sa1076.pdf
isc Silicon PNP Power Transistor 2SA1076DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
0.13. Size:215K inchange semiconductor
2sa1079.pdf
isc Silicon PNP Power Transistor 2SA1079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2529Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
0.14. Size:178K inchange semiconductor
2sa1075 2sa1076.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Ba
0.15. Size:163K inchange semiconductor
2sa1072 2sa1073.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2
0.16. Size:312K inchange semiconductor
2sa1073.pdf
isc Silicon PNP Power Transistor 2SA1073DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2523Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
0.17. Size:215K inchange semiconductor
2sa1078.pdf
isc Silicon PNP Power Transistor 2SA1078DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC2528Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiers and driversABSOLUTE MAX
0.18. Size:206K inchange semiconductor
2sa1072.pdf
isc Silicon PNP Power Transistor 2SA1072DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2522Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulators
0.19. Size:213K inchange semiconductor
2sa1077.pdf
isc Silicon PNP Power Transistor 2SA1077DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SC2527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifiersAudio power amplifiersSwitching regulatorsD
0.20. Size:181K inchange semiconductor
2sa1075.pdf
isc Silicon PNP Power Transistor 2SA1075DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2525Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsswitching regulatorsDC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(
0.21. Size:168K inchange semiconductor
2sa1074.pdf
isc Silicon PNP Power Transistor 2SA1074DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio stepping motor and otherlinear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAME
Otros transistores... 2SA1063
, 2SA1064
, 2SA1065
, 2SA1066
, 2SA1067
, 2SA1068
, 2SA1069
, 2SA1069A
, 2SD669
, 2SA1072
, 2SA1072A
, 2SA1073
, 2SA1074
, 2SA1075
, 2SA1076
, 2SA1077
, 2SA1078
.