2SA107. Аналоги и основные параметры
Наименование производителя: 2SA107
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO44
Аналоги (замена) для 2SA107
- подборⓘ биполярного транзистора по параметрам
2SA107 даташит
0.5. Size:149K jmnic
2sa1079.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1079 DESCRIPTION With TO-220 package High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base
0.6. Size:128K jmnic
2sa1075 2sa1076.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base Coll
0.7. Size:156K jmnic
2sa1073.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 s
0.8. Size:150K jmnic
2sa1078.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1078 DESCRIPTION With TO-220 package Complement to type 2SC2528 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers and drivers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
0.9. Size:156K jmnic
2sa1072.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 s
0.10. Size:152K jmnic
2sa1077.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION With TO-220 package Complement to type 2SC2527 High transition frequency Excellent safe operating area APPLICATIONS High-frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mou
0.11. Size:149K jmnic
2sa1074.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1074 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col
0.12. Size:219K inchange semiconductor
2sa1076.pdf 
isc Silicon PNP Power Transistor 2SA1076 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications switching regulators DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(
0.13. Size:215K inchange semiconductor
2sa1079.pdf 
isc Silicon PNP Power Transistor 2SA1079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2529 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers and drivers ABSOLUTE MAX
0.14. Size:178K inchange semiconductor
2sa1075 2sa1076.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Ba
0.15. Size:163K inchange semiconductor
2sa1072 2sa1073.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1072 2SA1073 DESCRIPTION With TO-3 package Complement to type 2SC2522/2523 Excellent safe operating area Fast switching speed APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2
0.16. Size:312K inchange semiconductor
2sa1073.pdf 
isc Silicon PNP Power Transistor 2SA1073 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2523 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators
0.17. Size:215K inchange semiconductor
2sa1078.pdf 
isc Silicon PNP Power Transistor 2SA1078 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SC2528 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers and drivers ABSOLUTE MAX
0.18. Size:206K inchange semiconductor
2sa1072.pdf 
isc Silicon PNP Power Transistor 2SA1072 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2522 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators
0.19. Size:213K inchange semiconductor
2sa1077.pdf 
isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SC2527 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators D
0.20. Size:181K inchange semiconductor
2sa1075.pdf 
isc Silicon PNP Power Transistor 2SA1075 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications switching regulators DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(
0.21. Size:168K inchange semiconductor
2sa1074.pdf 
isc Silicon PNP Power Transistor 2SA1074 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio stepping motor and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME
Другие транзисторы: 2SA1063, 2SA1064, 2SA1065, 2SA1066, 2SA1067, 2SA1068, 2SA1069, 2SA1069A, 2SD669, 2SA1072, 2SA1072A, 2SA1073, 2SA1074, 2SA1075, 2SA1076, 2SA1077, 2SA1078
