RT1N230M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N230M
Código: NL
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-70
Búsqueda de reemplazo de transistor bipolar RT1N230M
RT1N230M Datasheet (PDF)
rt1n230c rt1n230m rt1n230s rt1n230u.pdf
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TransistorRT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION Inverted circuit,swit
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TransistorRT1N234X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N234X is a one chip transistor RT1N234C with built-in bias resistor,PNP type is RT1P234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION Inverted circuit,switc
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TransistorRT1N237X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N237X is a one chip transistor RT1N237C with built-in bias resistor,PNP type is RT1P237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION Inverted circuit,switc
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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History: 2N477A | 2N1557A | 2N1816 | 2N1559
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