RT1N230M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1N230M
SMD Transistor Code: NL
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-70
RT1N230M Transistor Equivalent Substitute - Cross-Reference Search
RT1N230M Datasheet (PDF)
rt1n230c rt1n230m rt1n230s rt1n230u.pdf
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TransistorRT1N231X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N231X is a one chip transistor RT1N231C with built-in bias resistor,PNP type is RT1P231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION Inverted circuit,swit
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TransistorRT1N234X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N234X is a one chip transistor RT1N234C with built-in bias resistor,PNP type is RT1P234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION Inverted circuit,switc
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TransistorRT1N237X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N237X is a one chip transistor RT1N237C with built-in bias resistor,PNP type is RT1P237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION Inverted circuit,switc
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