RT1N434C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1N434C
Código: N4
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1N434C
RT1N434C Datasheet (PDF)
rt1n434c rt1n434m rt1n434s rt1n434u.pdf
TransistorRT1N434X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N434X is a one chip transistor RT1N434C with built-in bias resistor,PNP type is RT1P434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION Inverted circuit,switc
rt1n436c rt1n436m rt1n436s rt1n436u.pdf
TransistorRT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N436X is a one chip transistor RT1N436C with built-in bias resistor,PNP type is RT1P436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION Inverted circuit,switc
rt1n431c rt1n431m rt1n431s rt1n431u.pdf
TransistorRT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,swit
rt1n430c rt1n430m rt1n430s rt1n430u.pdf
TransistorRT1N430X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N430X is a one chip transistor RT1N430C with built-in bias resistor, PNP type is RT1P430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k) APPLICATION Inverted circuit, switching cir
rt1n432c rt1n432m rt1n432s rt1n432u.pdf
TransistorRT1N432X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N432X is a one chip transistor RT1N432C with built-in bias resistor,PNP type is RT1P432X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=10k). APPLICATION Inverted circuit,switc
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