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RT1N436S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1N436S
   Código: N436
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO92S
 

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RT1N436S Datasheet (PDF)

 ..1. Size:168K  isahaya
 rt1n436c rt1n436m rt1n436s rt1n436u.pdf pdf_icon

RT1N436S

TransistorRT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N436X is a one chip transistor RT1N436C with built-in bias resistor,PNP type is RT1P436X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=47k). APPLICATION Inverted circuit,switc

 8.1. Size:141K  isahaya
 rt1n434c rt1n434m rt1n434s rt1n434u.pdf pdf_icon

RT1N436S

TransistorRT1N434X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N434X is a one chip transistor RT1N434C with built-in bias resistor,PNP type is RT1P434X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=22k). APPLICATION Inverted circuit,switc

 8.2. Size:153K  isahaya
 rt1n431c rt1n431m rt1n431s rt1n431u.pdf pdf_icon

RT1N436S

TransistorRT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,swit

 8.3. Size:126K  isahaya
 rt1n430c rt1n430m rt1n430s rt1n430u.pdf pdf_icon

RT1N436S

TransistorRT1N430X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N430X is a one chip transistor RT1N430C with built-in bias resistor, PNP type is RT1P430X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k) APPLICATION Inverted circuit, switching cir

MOSTRAR MÁS

Otros transistores... RT1N432S , RT1N432U , RT1N434C , RT1N434M , RT1N434S , RT1N434U , RT1N436C , RT1N436M , B647 , RT1N436U , RT1N440C , RT1N440M , RT1N440S , RT1N440U , RT1N441C , RT1N441M , RT1N441S .

History: 2SC515 | KT218E9 | MMUN2232L | DMBT5551 | 40306 | BT2951

 

 
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