RT1P137S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P137S
Código: P137
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 0.045
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO-92S
Búsqueda de reemplazo de RT1P137S
RT1P137S Datasheet (PDF)
rt1p137s.pdf

RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)
rt1p137p.pdf

ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person
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TransistorRT1P136X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P136X is a one chip transistor RT1P136C with built-in bias resistor,NPN type is RT1N136X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k,R2=10k). APPLICATION Inverted circuit,switchi
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TransistorRT1P130X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P130X is a one chip transistor RT1P130C with built-in bias resistor,NPN type is RT1N130X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=1k). APPLICATION . Inverted circuit,switching circ
Otros transistores... RT1P130M , RT1P130S , RT1P130U , RT1P136C , RT1P136M , RT1P136S , RT1P136U , RT1P137P , 2SA1943 , RT1P140C , RT1P140M , RT1P140S , RT1P140U , RT1P141C , RT1P141M , RT1P141S , RT1P141U .
History: 2SD892A | 2SA495 | BCR162 | BSY11
History: 2SD892A | 2SA495 | BCR162 | BSY11



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