RT1P137S Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P137S
SMD Transistor Code: P137
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 0.045
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 130
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92S
RT1P137S Transistor Equivalent Substitute - Cross-Reference Search
RT1P137S Datasheet (PDF)
rt1p137s.pdf
RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)
rt1p137p.pdf
ISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to person
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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KC327 | KC308C | KTA1270 | CSA1267GR | KC308B | SRA2211M | 2SB1164
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