RT1P137S Datasheet, Equivalent, Cross Reference Search
Type Designator: RT1P137S
SMD Transistor Code: P137
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 0.045
Maximum Collector Power Dissipation (Pc): 0.6
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 130
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92S
RT1P137S Transistor Equivalent Substitute - Cross-Reference Search
RT1P137S Datasheet (PDF)
rt1p137s.pdf
RT1P137S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 4.0 RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. FEATURE 0.1 Built-in bias resistor R =1k, R =22k 1 2High collector current Ic=-1A 0.45 Low VCE(sat) VCE(sat)=-0.3V (@Ic=-300mA/IB=-3mA)
rt1p137p.pdf
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