2SA1080 Todos los transistores

 ..1. Size:194K  fuji
 2sa1080.pdf

 ..2. Size:214K  inchange semiconductor
 2sa1080.pdf

isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SC2530 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

 8.1. Size:24K  hitachi
 2sa1025 2sa1081 2sa1082.pdf

2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter

 8.2. Size:38K  hitachi
 2sa1083 2sa1084 2sa1085.pdf

2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1083 2SA1084 2SA1085 Unit Collector to base voltage VCBO 60 90 120 V Collector t

 8.3. Size:77K  secos
 2sa1082.pdf

2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1082-D 2SA1082-E A D Range 250-500 400-800 Millimeter REF. Min. Max. B A 4.40 4.70 B

 8.4. Size:77K  secos
 2sa1084.pdf

2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1084-D 2SA1084-E A D Range 250-500 400-800 Millimeter REF. Min. Max. B A 4.40 4.70 B 4.

 8.5. Size:77K  secos
 2sa1083.pdf

2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1083-D 2SA1083-E A D Range 250-500 400-800 Millimeter REF. Min. Max. B A 4.40 4.70 B 4.

 8.6. Size:77K  secos
 2sa1081.pdf

2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1081-D 2SA1081-E A D Range 250 500 400 800 Millimeter REF. Min. Max. B A 4.40 4.70 B 4.

 8.7. Size:208K  inchange semiconductor
 2sa1082.pdf

isc Silicon PNP Transistor 2SA1082 DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -