2SA1080 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1080
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SA1080 Transistor Equivalent Substitute - Cross-Reference Search
2SA1080 Datasheet (PDF)
2sa1080.pdf
isc Silicon PNP Power Transistor 2SA1080DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2530Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT
2sa1025 2sa1081 2sa1082.pdf
2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter
2sa1083 2sa1084 2sa1085.pdf
2SA1083, 2SA1084, 2SA1085Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1083, 2SA1084, 2SA1085Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1083 2SA1084 2SA1085 UnitCollector to base voltage VCBO 60 90 120 VCollector t
2sa1082.pdf
2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1082-D 2SA1082-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B
2sa1084.pdf
2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1084-D 2SA1084-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1083.pdf
2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1083-D 2SA1083-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1081.pdf
2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1081-D 2SA1081-EA DRange 250~500 400~800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1082.pdf
isc Silicon PNP Transistor 2SA1082DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign For Amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
