2SA1082 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1082
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SA1082
2SA1082 Datasheet (PDF)
2sa1025 2sa1081 2sa1082.pdf
2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter
2sa1082.pdf
2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1082-D 2SA1082-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B
2sa1082.pdf
isc Silicon PNP Transistor 2SA1082DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign For Amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -
2sa1083 2sa1084 2sa1085.pdf
2SA1083, 2SA1084, 2SA1085Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1083, 2SA1084, 2SA1085Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1083 2SA1084 2SA1085 UnitCollector to base voltage VCBO 60 90 120 VCollector t
2sa1084.pdf
2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1084-D 2SA1084-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1083.pdf
2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1083-D 2SA1083-EA DRange 250-500 400-800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1081.pdf
2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1081-D 2SA1081-EA DRange 250~500 400~800MillimeterREF.Min. Max.BA 4.40 4.70B 4.
2sa1080.pdf
isc Silicon PNP Power Transistor 2SA1080DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SC2530Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SA1075 , 2SA1076 , 2SA1077 , 2SA1078 , 2SA1079 , 2SA108 , 2SA1080 , 2SA1081 , A92 , 2SA1083 , 2SA1084 , 2SA1085 , 2SA109 , 2SA1090 , 2SA1091 , 2SA1091O , 2SA1091R .
