2SA1082 Specs and Replacement
Type Designator: 2SA1082
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO92
2SA1082 Substitution
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2SA1082 datasheet
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter ... See More ⇒
2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1082-D 2SA1082-E A D Range 250-500 400-800 Millimeter REF. Min. Max. B A 4.40 4.70 B ... See More ⇒
isc Silicon PNP Transistor 2SA1082 DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -... See More ⇒
Detailed specifications: 2SA1075 , 2SA1076 , 2SA1077 , 2SA1078 , 2SA1079 , 2SA108 , 2SA1080 , 2SA1081 , TIP120 , 2SA1083 , 2SA1084 , 2SA1085 , 2SA109 , 2SA1090 , 2SA1091 , 2SA1091O , 2SA1091R .
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