RT1P250C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT1P250C
Código: PT
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 200 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar RT1P250C
RT1P250C Datasheet (PDF)
rt1p250c rt1p250m rt1p250s rt1p250u.pdf
TransistorRT1P250X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P250X is a one chip transistor RT1P250C with built-in bias resistor,NPN type is RT1N250X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=200k). APPLICATION . Inverted circuit,switching ci
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TransistorRT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=10k). APPLICATION . Inverted circuit,swi
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TransistorRT1P242X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P242X is a one chip transistor RT1P242C with built-in bias resistor,NPN type is RT1N242X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=47k). APPLICATION . Inverted circuit,swit
rt1p241c rt1p241m rt1p241s rt1p241u.pdf
TransistorRT1P241X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P241X is a one chip transistor RT1P241C with built-in bias resistor,NPN type is RT1N241X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=22k,R2=22k). APPLICATION Inverted circuit,switch
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TransistorRT1P230X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P230X is a one chip transistor RT1P230C with built-in bias resistor,NPN type is RT1N230X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k). APPLICATION . Inverted circuit,switching ci
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TransistorRT1P237X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P237X is a one chip transistor RT1P237C with built-in bias resistor,NPN type is RT1N237X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=47k). APPLICATION . Inverted circuit,swi
rt1p231c rt1p231m rt1p231s rt1p231u.pdf
TransistorRT1P231X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P231X is a one chip transistor RT1P231C with built-in bias resistor,NPN type is RT1N231X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=2.2k,R2=2.2k). APPLICATION . Inverted circuit,sw
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TransistorRT1P24BX SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P24BX is a one chip transistor RT1P24BC with built-in bias resistor,NPN type is RT1N24BX. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R2=22k). APPLICATION Inverted circuit,switching circu
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