RT1P250C datasheet, аналоги, основные параметры
Наименование производителя: RT1P250C
Маркировка: PT
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 200 kOhm
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC-59
Аналоги (замена) для RT1P250C
- подборⓘ биполярного транзистора по параметрам
RT1P250C даташит
rt1p250c rt1p250m rt1p250s rt1p250u.pdf
Transistor RT1P250X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P250X is a one chip transistor RT1P250C with built-in bias resistor,NPN type is RT1N250X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=200k ). APPLICATION . Inverted circuit,switching ci
rt1p240c rt1p240m rt1p240s rt1p240u.pdf
Transistor RT1P240X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P240X is a one chip transistor RT1P240C with built-in bias resistor,NPN type is RT1N240X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ). APPLICATION . Inverted circuit,switching cir
rt1p234c rt1p234m rt1p234s rt1p234u.pdf
Transistor RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P234X is a one chip transistor RT1P234C with built-in bias resistor,NPN type is RT1N234X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=2.2k ,R2=10k ). APPLICATION . Inverted circuit,swi
rt1p242c rt1p242m rt1p242s rt1p242u.pdf
Transistor RT1P242X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P242X is a one chip transistor RT1P242C with built-in bias resistor,NPN type is RT1N242X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=22k ,R2=47k ). APPLICATION . Inverted circuit,swit
Другие транзисторы: RT1P242C, RT1P242M, RT1P242S, RT1P242U, RT1P24BC, RT1P24BM, RT1P24BS, RT1P24BU, BC547B, RT1P250M, RT1P250S, RT1P250U, RT1P430C, RT1P430M, RT1P430S, RT1P430U, RT1P431C
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Список транзисторов
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