RT2N03M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT2N03M

Código: N1

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: SC-88A

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RT2N03M datasheet

 9.1. Size:190K  isahaya
 rt2n09m.pdf pdf_icon

RT2N03M

RT2N09M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k , R2=47k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:202K  isahaya
 rt2n04m.pdf pdf_icon

RT2N03M

RT2N04M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k , R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:190K  isahaya
 rt2n02m.pdf pdf_icon

RT2N03M

RT2N02M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k , R2=4.7k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.4. Size:195K  isahaya
 rt2n08m.pdf pdf_icon

RT2N03M

RT2N08M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k , R2=10k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

MOSTRAR MÁS

Otros transistores... RT1P44HS, RT1P44HU, RT1P44QC, RT1P44QM, RT1P44QS, RT1P44QU, RT2N01M, RT2N02M, A1941, RT2N04M, RT2N05M, RT2N06M, RT2N07M, RT2N08M, RT2N09M, RT2N10M, RT2N11M