RT2N10M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RT2N10M

Código: NG

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SC-88A

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RT2N10M datasheet

 ..1. Size:192K  isahaya
 rt2n10m.pdf pdf_icon

RT2N10M

RT2N10M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k , R2=10k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:166K  isahaya
 rt2n13m.pdf pdf_icon

RT2N10M

RT2N13M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k , R2=4.7k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:165K  isahaya
 rt2n17m.pdf pdf_icon

RT2N10M

RT2N17M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k , R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:207K  isahaya
 rt2n14m.pdf pdf_icon

RT2N10M

RT2N14M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k , R2=47k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

MOSTRAR MÁS

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