All Transistors. RT2N10M Datasheet

 

RT2N10M Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT2N10M
   SMD Transistor Code: NG
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC-88A

 RT2N10M Transistor Equivalent Substitute - Cross-Reference Search

   

RT2N10M Datasheet (PDF)

 ..1. Size:192K  isahaya
rt2n10m.pdf

RT2N10M
RT2N10M

RT2N10M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:166K  isahaya
rt2n13m.pdf

RT2N10M
RT2N10M

RT2N13M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:165K  isahaya
rt2n17m.pdf

RT2N10M
RT2N10M

RT2N17M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:207K  isahaya
rt2n14m.pdf

RT2N10M
RT2N10M

RT2N14M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.4. Size:169K  isahaya
rt2n15m.pdf

RT2N10M
RT2N10M

RT2N15M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N15M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.5. Size:165K  isahaya
rt2n11m.pdf

RT2N10M
RT2N10M

RT2N11M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N11M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.6. Size:165K  isahaya
rt2n16m.pdf

RT2N10M
RT2N10M

RT2N16M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.7. Size:164K  isahaya
rt2n18m.pdf

RT2N10M
RT2N10M

RT2N18M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit

 9.8. Size:207K  isahaya
rt2n12m.pdf

RT2N10M
RT2N10M

RT2N12M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.9. Size:164K  isahaya
rt2n19m.pdf

RT2N10M
RT2N10M

RT2N19M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N19M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: D7D3 | 2N2975

 

 
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