RT2N10M Datasheet. Specs and Replacement

Type Designator: RT2N10M

SMD Transistor Code: NG

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-88A

 RT2N10M Substitution

- BJT ⓘ Cross-Reference Search

 

RT2N10M datasheet

 ..1. Size:192K  isahaya

rt2n10m.pdf pdf_icon

RT2N10M

RT2N10M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k , R2=10k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte... See More ⇒

 9.1. Size:166K  isahaya

rt2n13m.pdf pdf_icon

RT2N10M

RT2N13M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k , R2=4.7k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte... See More ⇒

 9.2. Size:165K  isahaya

rt2n17m.pdf pdf_icon

RT2N10M

RT2N17M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k , R2=22k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter... See More ⇒

 9.3. Size:207K  isahaya

rt2n14m.pdf pdf_icon

RT2N10M

RT2N14M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k , R2=47k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter... See More ⇒

Detailed specifications: RT2N02M, RT2N03M, RT2N04M, RT2N05M, RT2N06M, RT2N07M, RT2N08M, RT2N09M, S9014, RT2N11M, RT2N12M, RT2N13M, RT2N14M, RT2N15M, RT2N16M, RT2N17M, RT2N18M

Keywords - RT2N10M pdf specs

 RT2N10M cross reference

 RT2N10M equivalent finder

 RT2N10M pdf lookup

 RT2N10M substitution

 RT2N10M replacement