RT2N11M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RT2N11M
   Código: N4
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SC-88A

Búsqueda de reemplazo de transistor bipolar RT2N11M

RT2N11M Datasheet (PDF)

..1. Size:165K isahaya
rt2n11m.pdf

RT2N11M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N11M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

9.1. Size:166K isahaya
rt2n13m.pdf

RT2N13M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

9.2. Size:165K isahaya
rt2n17m.pdf

RT2N17M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

9.3. Size:207K isahaya
rt2n14m.pdf

RT2N14M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

9.4. Size:169K isahaya
rt2n15m.pdf

RT2N15M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N15M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

9.5. Size:165K isahaya
rt2n16m.pdf

RT2N16M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

9.6. Size:164K isahaya
rt2n18m.pdf

RT2N18M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit

9.7. Size:207K isahaya
rt2n12m.pdf

RT2N12M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

9.8. Size:192K isahaya
rt2n10m.pdf

RT2N10M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

9.9. Size:164K isahaya
rt2n19m.pdf

RT2N19M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N19M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

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