RT2N19M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT2N19M
Código: NL
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SC-88A
Búsqueda de reemplazo de transistor bipolar RT2N19M
RT2N19M
Datasheet (PDF)
..1. Size:164K isahaya
rt2n19m.pdf
RT2N19M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N19M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu
9.1. Size:166K isahaya
rt2n13m.pdf
RT2N13M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.2. Size:165K isahaya
rt2n17m.pdf
RT2N17M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.3. Size:207K isahaya
rt2n14m.pdf
RT2N14M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.4. Size:169K isahaya
rt2n15m.pdf
RT2N15M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N15M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.5. Size:165K isahaya
rt2n11m.pdf
RT2N11M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N11M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.6. Size:165K isahaya
rt2n16m.pdf
RT2N16M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.7. Size:164K isahaya
rt2n18m.pdf
RT2N18M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N18M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit
9.8. Size:207K isahaya
rt2n12m.pdf
RT2N12M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.9. Size:192K isahaya
rt2n10m.pdf
RT2N10M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
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