RT2N23M Todos los transistores

 

RT2N23M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N23M
   Código: NR
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-88A
 

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RT2N23M Datasheet (PDF)

 ..1. Size:163K  isahaya
 rt2n23m.pdf pdf_icon

RT2N23M

RT2N23M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N23M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.1. Size:164K  isahaya
 rt2n24m.pdf pdf_icon

RT2N23M

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:163K  isahaya
 rt2n25m.pdf pdf_icon

RT2N23M

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.3. Size:163K  isahaya
 rt2n26m.pdf pdf_icon

RT2N23M

RT2N26M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

MOSTRAR MÁS

Otros transistores... RT2N15M , RT2N16M , RT2N17M , RT2N18M , RT2N19M , RT2N20M , RT2N21M , RT2N22M , BD135 , RT2N24M , RT2N25M , RT2N26M , RT2N27M , RT2N28M , RT2N29M , RT2N62M , RT2N63M .

 

 
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