RT2N23M Todos los transistores

 

RT2N23M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N23M
   Código: NR
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-88A

 Búsqueda de reemplazo de transistor bipolar RT2N23M

 

RT2N23M Datasheet (PDF)

 ..1. Size:163K  isahaya
rt2n23m.pdf

RT2N23M RT2N23M

RT2N23M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N23M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.1. Size:164K  isahaya
rt2n24m.pdf

RT2N23M RT2N23M

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:163K  isahaya
rt2n25m.pdf

RT2N23M RT2N23M

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.3. Size:163K  isahaya
rt2n26m.pdf

RT2N23M RT2N23M

RT2N26M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.4. Size:164K  isahaya
rt2n20m.pdf

RT2N23M RT2N23M

RT2N20M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.5. Size:165K  isahaya
rt2n29m.pdf

RT2N23M RT2N23M

RT2N29M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N29M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.6. Size:164K  isahaya
rt2n28m.pdf

RT2N23M RT2N23M

RT2N28M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N28M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.7. Size:164K  isahaya
rt2n21m.pdf

RT2N23M RT2N23M

RT2N21M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N21M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.8. Size:164K  isahaya
rt2n22m.pdf

RT2N23M RT2N23M

RT2N22M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.9. Size:164K  isahaya
rt2n27m.pdf

RT2N23M RT2N23M

RT2N27M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N27M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

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