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RT2N26M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2N26M
   Código: NU
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC-88A
 

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RT2N26M Datasheet (PDF)

 ..1. Size:163K  isahaya
 rt2n26m.pdf pdf_icon

RT2N26M

RT2N26M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N26M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

 9.1. Size:164K  isahaya
 rt2n24m.pdf pdf_icon

RT2N26M

RT2N24M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N24M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.2. Size:163K  isahaya
 rt2n25m.pdf pdf_icon

RT2N26M

RT2N25M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N25M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=200k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

 9.3. Size:164K  isahaya
 rt2n20m.pdf pdf_icon

RT2N26M

RT2N20M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N20M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circu

MOSTRAR MÁS

Otros transistores... RT2N18M , RT2N19M , RT2N20M , RT2N21M , RT2N22M , RT2N23M , RT2N24M , RT2N25M , TIP31 , RT2N27M , RT2N28M , RT2N29M , RT2N62M , RT2N63M , RT2N65M , RT2P01M , RT2P02M .

History: CMLT3410 | CMLT5551 | 2N6547T3

 

 
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