RT2P06M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RT2P06M
Código: PA
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 82
Paquete / Cubierta:
SC-88A
Búsqueda de reemplazo de transistor bipolar RT2P06M
RT2P06M
Datasheet (PDF)
..1. Size:165K isahaya
rt2p06m.pdf
RT2P06M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P06M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k, R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
9.1. Size:195K isahaya
rt2p02m.pdf
RT2P02M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
9.2. Size:166K isahaya
rt2p04m.pdf
RT2P04M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.3. Size:192K isahaya
rt2p08m.pdf
RT2P08M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.4. Size:166K isahaya
rt2p09m.pdf
RT2P09M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
9.5. Size:166K isahaya
rt2p05m.pdf
RT2P05M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P05M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
9.6. Size:165K isahaya
rt2p07m.pdf
RT2P07M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P07M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interf
9.7. Size:165K isahaya
rt2p01m.pdf
RT2P01M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P01M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
9.8. Size:166K isahaya
rt2p03m.pdf
RT2P03M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P03M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
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