All Transistors. RT2P06M Datasheet

 

RT2P06M Datasheet and Replacement


   Type Designator: RT2P06M
   SMD Transistor Code: PA
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SC-88A
 

 RT2P06M Substitution

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RT2P06M Datasheet (PDF)

 ..1. Size:165K  isahaya
rt2p06m.pdf pdf_icon

RT2P06M

RT2P06M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P06M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k, R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.1. Size:195K  isahaya
rt2p02m.pdf pdf_icon

RT2P06M

RT2P02M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.2. Size:166K  isahaya
rt2p04m.pdf pdf_icon

RT2P06M

RT2P04M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:192K  isahaya
rt2p08m.pdf pdf_icon

RT2P06M

RT2P08M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

Datasheet: RT2N62M , RT2N63M , RT2N65M , RT2P01M , RT2P02M , RT2P03M , RT2P04M , RT2P05M , 2N4401 , RT2P07M , RT2P08M , RT2P09M , RT2P10M , RT2P11M , RT2P12M , RT2P13M , RT2P14M .

History: 2N406 | HX789A | ZXTN2005Z | BC448A | 2N90 | 2N6183 | 2N6292

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