RT2P08M Todos los transistores

 

RT2P08M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2P08M
   Código: PE
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SC-88A

 Búsqueda de reemplazo de transistor bipolar RT2P08M

 

RT2P08M Datasheet (PDF)

 ..1. Size:192K  isahaya
rt2p08m.pdf

RT2P08M RT2P08M

RT2P08M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:195K  isahaya
rt2p02m.pdf

RT2P08M RT2P08M

RT2P02M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.2. Size:166K  isahaya
rt2p04m.pdf

RT2P08M RT2P08M

RT2P04M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:166K  isahaya
rt2p09m.pdf

RT2P08M RT2P08M

RT2P09M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.4. Size:166K  isahaya
rt2p05m.pdf

RT2P08M RT2P08M

RT2P05M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P05M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.5. Size:165K  isahaya
rt2p06m.pdf

RT2P08M RT2P08M

RT2P06M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P06M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k, R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.6. Size:165K  isahaya
rt2p07m.pdf

RT2P08M RT2P08M

RT2P07M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P07M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interf

 9.7. Size:165K  isahaya
rt2p01m.pdf

RT2P08M RT2P08M

RT2P01M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P01M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.8. Size:166K  isahaya
rt2p03m.pdf

RT2P08M RT2P08M

RT2P03M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P03M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

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History: ZTX3709L | D41D13 | TN4126 | 2SC473

 

 
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