Биполярный транзистор RT2P08M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RT2P08M
Маркировка: PE
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 0.22
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hfe): 33
Корпус транзистора: SC-88A
RT2P08M Datasheet (PDF)
rt2p08m.pdf
RT2P08M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
rt2p02m.pdf
RT2P02M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
rt2p04m.pdf
RT2P04M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
rt2p09m.pdf
RT2P09M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte
rt2p05m.pdf
RT2P05M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P05M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
rt2p06m.pdf
RT2P06M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P06M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=100k, R2=100k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
rt2p07m.pdf
RT2P07M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P07M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=1k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interf
rt2p01m.pdf
RT2P01M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P01M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=2.2k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int
rt2p03m.pdf
RT2P03M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P03M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter
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