RT2P10M Todos los transistores

 

RT2P10M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT2P10M
   Código: PG
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC-88A
 

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RT2P10M Datasheet (PDF)

 ..1. Size:166K  isahaya
 rt2p10m.pdf pdf_icon

RT2P10M

RT2P10M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P10M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:165K  isahaya
 rt2p16m.pdf pdf_icon

RT2P10M

RT2P16M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.2. Size:201K  isahaya
 rt2p14m.pdf pdf_icon

RT2P10M

RT2P14M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:205K  isahaya
 rt2p12m.pdf pdf_icon

RT2P10M

RT2P12M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

MOSTRAR MÁS

Otros transistores... RT2P02M , RT2P03M , RT2P04M , RT2P05M , RT2P06M , RT2P07M , RT2P08M , RT2P09M , S9013 , RT2P11M , RT2P12M , RT2P13M , RT2P14M , RT2P15M , RT2P16M , RT2P17M , RT2P18M .

History: 2SD593 | K129NT1B-1

 

 
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