2SA110 Todos los transistores

 

2SA110 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA110
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.08 W
   Tensión colector-base (Vcb): 20 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO44

 Búsqueda de reemplazo de transistor bipolar 2SA110

 

2SA110 Datasheet (PDF)

 0.1. Size:79K  wingshing
2sa1104.pdf

2SA110

Silicon Epitaxial Planar Transistor2SA1104GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 120 VCollector-emitter voltage (open base)VCEO - 120 VCollector curren

 0.2. Size:48K  wingshing
2sa1103.pdf

2SA110

2SA1103 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2578 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -7

 0.3. Size:26K  wingshing
2sa1102.pdf

2SA110

2SA1102 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle

 0.4. Size:48K  wingshing
2sa1105.pdf

2SA110

2SA1105 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -9

 0.5. Size:25K  wingshing
2sa1106.pdf

2SA110

2SA1106 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll

 0.6. Size:144K  jmnic
2sa1109.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ra

 0.7. Size:149K  jmnic
2sa1104.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS For use in audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

 0.8. Size:159K  jmnic
2sa1108.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

 0.9. Size:159K  jmnic
2sa1107.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 0.10. Size:149K  jmnic
2sa1103.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1103 DESCRIPTION With TO-3PN package Complement to type 2SC2578 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

 0.11. Size:149K  jmnic
2sa1102.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION With TO-3PN package Complement to type 2SC2577 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

 0.12. Size:149K  jmnic
2sa1105.pdf

2SA110
2SA110

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1105 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 0.13. Size:149K  jmnic
2sa1106.pdf

2SA110
2SA110

JMnic Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 0.14. Size:192K  cn sptech
2sa1106.pdf

2SA110
2SA110

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1106DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SC2581APPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

 0.15. Size:208K  inchange semiconductor
2sa1109.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1109DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 0.16. Size:224K  inchange semiconductor
2sa1104.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1104DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

 0.17. Size:220K  inchange semiconductor
2sa1108.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1108DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -130V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 0.18. Size:219K  inchange semiconductor
2sa1107.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1107DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 0.19. Size:222K  inchange semiconductor
2sa1103.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1103DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100

 0.20. Size:221K  inchange semiconductor
2sa1102.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1102DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 V

 0.21. Size:223K  inchange semiconductor
2sa1105.pdf

2SA110
2SA110

isc Silicon PNP Power Transistor 2SA1105DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

 0.22. Size:202K  inchange semiconductor
2sa1106.pdf

2SA110
2SA110

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1106DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SC2581Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXI

Otros transistores... 2SA1091R , 2SA1092 , 2SA1093 , 2SA1094 , 2SA1095 , 2SA1096 , 2SA1096A , 2SA1097 , 13007 , 2SA1100 , 2SA1102 , 2SA1103 , 2SA1104 , 2SA1105 , 2SA1106 , 2SA1107 , 2SA1107A .

 

 
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