RTBN432AP1 Todos los transistores

 

RTBN432AP1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTBN432AP1
   Código: NH
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SC-62
 

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RTBN432AP1 Datasheet (PDF)

 ..1. Size:112K  isahaya
 rtbn432ap1.pdf pdf_icon

RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN432AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN432AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

 9.1. Size:112K  isahaya
 rtbn426ap1.pdf pdf_icon

RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN426AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN426AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

Otros transistores... RTAN430M , RTAN430U , RTBN131AP1 , RTBN141AP1 , RTBN14BAP1 , RTBN226AP1 , RTBN234AP1 , RTBN426AP1 , BC639 , RTGN131AP , RTGN141AP , RTGN14BAP , RTGN226AP , RTGN234AP , RTGN426AP , RTGN432P , UMB10NFHA .

History: BC312 | 2N1078 | 2SD401Y | BUV36 | 2N5323GN | NTE272 | STA124SF

 

 
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