All Transistors. RTBN432AP1 Datasheet

 

RTBN432AP1 Datasheet and Replacement


   Type Designator: RTBN432AP1
   SMD Transistor Code: NH
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SC-62
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RTBN432AP1 Datasheet (PDF)

 ..1. Size:112K  isahaya
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RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN432AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN432AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

 9.1. Size:112K  isahaya
 rtbn426ap1.pdf pdf_icon

RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN426AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN426AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: GT321A | 2N3183 | MM4019 | 2N2473 | BF420A | BTB1424AT3 | 2SB1144S

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