All Transistors. RTBN432AP1 Datasheet

 

RTBN432AP1 Datasheet and Replacement


   Type Designator: RTBN432AP1
   SMD Transistor Code: NH
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SC-62
 

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RTBN432AP1 Datasheet (PDF)

 ..1. Size:112K  isahaya
 rtbn432ap1.pdf pdf_icon

RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN432AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN432AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

 9.1. Size:112K  isahaya
 rtbn426ap1.pdf pdf_icon

RTBN432AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN426AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN426AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

Datasheet: RTAN430M , RTAN430U , RTBN131AP1 , RTBN141AP1 , RTBN14BAP1 , RTBN226AP1 , RTBN234AP1 , RTBN426AP1 , BC639 , RTGN131AP , RTGN141AP , RTGN14BAP , RTGN226AP , RTGN234AP , RTGN426AP , RTGN432P , UMB10NFHA .

History: S1891 | 2SA813S4 | 2N3421 | UPT325

Keywords - RTBN432AP1 transistor datasheet

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