RTGN14BAP Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTGN14BAP

Código: NG

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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RTGN14BAP datasheet

 ..1. Size:136K  isahaya
 rtgn14bap.pdf pdf_icon

RTGN14BAP

SMALL-SIGNAL TRANSISTOR RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN14BAP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R2=10k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-in zener d

 8.1. Size:504K  isahaya
 rtgn141ap.pdf pdf_icon

RTGN14BAP

SMALL-SIGNAL TRANSISTOR RTGN141AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION 4.4 RTGN141AP is a one chip transistor with 1.5 1.6 built-in bias transistor. FEATURE Built-in bias resistor R1=10k ,R2=10k High collector current IC=1A Built-in zener diode betw

 9.1. Size:139K  isahaya
 rtgn131ap.pdf pdf_icon

RTGN14BAP

SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=1k ,R2=1k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-in

Otros transistores... RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, 2SC2383, RTGN226AP, RTGN234AP, RTGN426AP, RTGN432P, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA