RTGN14BAP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RTGN14BAP
Código: NG
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia Base-Emisor R2 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
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RTGN14BAP Datasheet (PDF)
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SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=1k,R2=1k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in
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