RTGN14BAP Datasheet, Equivalent, Cross Reference Search
Type Designator: RTGN14BAP
SMD Transistor Code: NG
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
RTGN14BAP Transistor Equivalent Substitute - Cross-Reference Search
RTGN14BAP Datasheet (PDF)
rtgn14bap.pdf
SMALL-SIGNAL TRANSISTOR RTGN14BAP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN14BAP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R2=10k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in zener d
rtgn141ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN141AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION 4.4RTGN141AP is a one chip transistor with 1.5 1.6built-in bias transistor. FEATURE Built-in bias resistor R1=10k,R2=10k High collector current IC=1A Built-in zener diode betw
rtgn131ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=1k,R2=1k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NKT262
