RTGN14BAP Specs and Replacement
Type Designator: RTGN14BAP
SMD Transistor Code: NG
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
RTGN14BAP Substitution
- BJT ⓘ Cross-Reference Search
RTGN14BAP datasheet
SMALL-SIGNAL TRANSISTOR RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN14BAP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R2=10k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-in zener d... See More ⇒
SMALL-SIGNAL TRANSISTOR RTGN141AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION 4.4 RTGN141AP is a one chip transistor with 1.5 1.6 built-in bias transistor. FEATURE Built-in bias resistor R1=10k ,R2=10k High collector current IC=1A Built-in zener diode betw... See More ⇒
SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=1k ,R2=1k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-in... See More ⇒
Detailed specifications: RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, 2SC2383, RTGN226AP, RTGN234AP, RTGN426AP, RTGN432P, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA
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