SMUN5335DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMUN5335DW
Código: 35
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Empaquetado / Estuche: SOT-363
Búsqueda de reemplazo de transistor bipolar SMUN5335DW
SMUN5335DW Datasheet (PDF)
4.1. smun5311dw series.pdf 
Size:327K _secos
SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are
5.1. smun52xxdw.pdf Size:477K _secos
SMUN52XXDW NPN Multi-Chip Elektronische Bauelemente Built-in Resistors Transistor The BRT (Bias Resistor Transistor) contains a single transistor SOT-363 with a monolithic bias network consisting of two resistors; a series o .055(1.40) 8 base resistor and a base–emitter resistor. These digital transistors are .047(1.20) 0o .026TYP designed to replace a single device and its exte
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