KRC664E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC664E 📄📄
Código: NP
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TESV
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KRC664E datasheet
krc660e-krc664e.pdf
SEMICONDUCTOR KRC660E KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _
krc660u-krc664u.pdf
SEMICONDUCTOR KRC660U KRC664U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing
krc660f-krc664f.pdf
SEMICONDUCTOR KRC660F KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super m
Otros transistores... 2SC9014, 3DD4212DT, 3DD2499, E3150, 3DD5287, MP1526, SMUN5335DW, KRC663E, BC327, 2SA1897, 2SC5966, 2SC6092LS, 3DD4204D, CHT847BWPT, STC8050N, XP6111, 3DD209L
Parámetros del transistor bipolar y su interrelación.
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