3DD209L Todos los transistores

 

3DD209L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD209L

Código: D209L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: TO3P

Búsqueda de reemplazo de transistor bipolar 3DD209L

 

3DD209L Datasheet (PDF)

1.1. 3dd209l.pdf Size:470K _update_bjt

3DD209L
3DD209L

NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要参数 MAIN CHARACTERISTICS 封装 Package IC 12A VCEO 400V PC(TO-3PN(B)) 120W 用途 APPLICATIONS 节能灯 Energy-saving ligh 电子镇流器 Electronic ballasts 高频开关电源 High frequency switching power 高频功率变换 supply 一般功率放大

5.1. 3dd201.pdf Size:129K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION ·With TO-3 package ·High collector-base breakdown voltage : VCBO=350V APPLICATIONS ·For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

5.2. 3dd200.pdf Size:130K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD200 DESCRIPTION ·With TO-3 package ·High collector-base breakdown voltage : VCBO=250V APPLICATIONS ·For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

 5.3. 3dd207.pdf Size:127K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD207 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

5.4. 3dd2028ll.pdf Size:146K _china

3DD209L

3DD2028LL 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM Tc=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1A V(BR)CBO ICB=5mA ≥1100 ≥1400 ≥1600 ≥1800 V V(BR)CEO ICE=5mA ≥500 ≥600 ≥800 ≥1000 V V(BR)EBO IEB=0.5mA ≥8.0 V 直 流 ICBO VCB=1000V ≤0.3 mA 参 VBEsat

 5.5. 3dd203.pdf Size:151K _china

3DD209L

3DD203 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 10 W ICM 1 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.3A V(BR)CBO ICB=1mA ≥80 ≥150 ≥200 ≥250 ≥350 ≥450 V V(BR)CEO ICE=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

5.6. 3dd2073.pdf Size:144K _china

3DD209L

3DD2073 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Tc=25℃ 25 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 4 ℃/W IC=0.8A V(BR)CBO ICB=1mA ≥150 V V(BR)CEO ICE=1mA ≥150 V V(BR)EBO IEB=1mA ≥5.0 V 直 ICBO VCB=120V ≤10 mA 流 IEBO VEB=5V ≤10 mA 参 VBEsat ≤3.0 Ic=0.5A 数 V IB=0.05

5.7. 3dd204.pdf Size:151K _china

3DD209L

3DD204 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 30 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 3.33 ℃/W IC=0.6A V(BR)CBO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICB=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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