All Transistors. 3DD209L Datasheet

 

3DD209L Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD209L

SMD Transistor Code: D209L

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3P

3DD209L Transistor Equivalent Substitute - Cross-Reference Search

 

3DD209L Datasheet (PDF)

1.1. 3dd209l.pdf Size:470K _update_bjt

3DD209L
3DD209L

NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要参数 MAIN CHARACTERISTICS 封装 Package IC 12A VCEO 400V PC(TO-3PN(B)) 120W 用途 APPLICATIONS 节能灯 Energy-saving ligh 电子镇流器 Electronic ballasts 高频开关电源 High frequency switching power 高频功率变换 supply 一般功率放大

5.1. 3dd201.pdf Size:129K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION ·With TO-3 package ·High collector-base breakdown voltage : VCBO=350V APPLICATIONS ·For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

5.2. 3dd200.pdf Size:130K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD200 DESCRIPTION ·With TO-3 package ·High collector-base breakdown voltage : VCBO=250V APPLICATIONS ·For TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

 5.3. 3dd207.pdf Size:127K _inchange_semiconductor

3DD209L
3DD209L

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD207 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

5.4. 3dd2028ll.pdf Size:146K _china

3DD209L

3DD2028LL 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM Tc=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1A V(BR)CBO ICB=5mA ≥1100 ≥1400 ≥1600 ≥1800 V V(BR)CEO ICE=5mA ≥500 ≥600 ≥800 ≥1000 V V(BR)EBO IEB=0.5mA ≥8.0 V 直 流 ICBO VCB=1000V ≤0.3 mA 参 VBEsat

 5.5. 3dd203.pdf Size:151K _china

3DD209L

3DD203 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 10 W ICM 1 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.3A V(BR)CBO ICB=1mA ≥80 ≥150 ≥200 ≥250 ≥350 ≥450 V V(BR)CEO ICE=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

5.6. 3dd2073.pdf Size:144K _china

3DD209L

3DD2073 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Tc=25℃ 25 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 4 ℃/W IC=0.8A V(BR)CBO ICB=1mA ≥150 V V(BR)CEO ICE=1mA ≥150 V V(BR)EBO IEB=1mA ≥5.0 V 直 ICBO VCB=120V ≤10 mA 流 IEBO VEB=5V ≤10 mA 参 VBEsat ≤3.0 Ic=0.5A 数 V IB=0.05

5.7. 3dd204.pdf Size:151K _china

3DD209L

3DD204 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 30 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 3.33 ℃/W IC=0.6A V(BR)CBO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICB=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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