All Transistors. 3DD209L Datasheet

 

3DD209L Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD209L

SMD Transistor Code: D209L

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3P

3DD209L Transistor Equivalent Substitute - Cross-Reference Search

 

3DD209L Datasheet (PDF)

0.1. 3dd209l.pdf Size:212K _inchange_semiconductor

3DD209L
3DD209L

isc Silicon NPN Power Transistor 3DD209L DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving light ·Electronic ballasts ·High frequency switching power supply ·High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

0.2. 3dd209l.pdf Size:470K _jilin_sino

3DD209L
3DD209L

NPN WؚSRs_sQvfSO{ HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L ;NSpe MAIN CHARACTERISTICS \ň Package IC 12A VCEO 400V PC(TO-3PN(B)) 120W (u APPLICATIONS op Energy-saving

 9.1. 3dd202b.pdf Size:192K _inchange_semiconductor

3DD209L
3DD209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25℃)

9.2. 3dd208.pdf Size:202K _inchange_semiconductor

3DD209L
3DD209L

isc Silicon NPN Power Transistor 3DD208 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 200V(Min.) (BR)CEO ·DC Current Gain- : h = 30~250(Min.)@I = 0.5A FE C ·Collector-Emitter Saturation Voltage- : V )= 2.0V(Max)@ I = 1A CE(sat C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and powe

 9.3. 3dd207.pdf Size:193K _inchange_semiconductor

3DD209L
3DD209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD207 DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications

9.4. 3dd200.pdf Size:207K _inchange_semiconductor

3DD209L
3DD209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 100V(Min.) (BR)CEO ·DC Current Gain- : h = 30~120(Min.)@I = 2A FE C ·Collector-Emitter Saturation Voltage- : V )= 1.5V(Max)@ I = 3A CE(sat C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV

 9.5. 3dd201.pdf Size:204K _inchange_semiconductor

3DD209L
3DD209L

isc Silicon NPN Power Transistor 3DD201 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 150V(Min.) (BR)CEO ·DC Current Gain- : h = 40~120(Min.)@I = 2A FE C ·Collector-Emitter Saturation Voltage- : V )= 1.5V(Max)@ I = 5A CE(sat C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output applicati

9.6. 3dd202a.pdf Size:192K _inchange_semiconductor

3DD209L
3DD209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD202A DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25℃)

9.7. 3dd200d.pdf Size:205K _inchange_semiconductor

3DD209L
3DD209L

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD200D DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-h =15(Min)@I = 8A FE C ·Low Saturation Voltage- : V )= 1.4V(Max)@ I = 8A CE(sat C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear

9.8. 3dd2028ll.pdf Size:146K _china

3DD209L

3DD2028LL 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM Tc=75℃ 50 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 2 ℃/W IC=1A V(BR)CBO ICB=5mA ≥1100 ≥1400 ≥1600 ≥1800 V V(BR)CEO ICE=5mA ≥500 ≥600 ≥800 ≥1000 V V(BR)EBO IEB=0.5mA ≥8.0 V 直 流 ICBO VCB=1000V ≤0.3 mA 参 VBEsat

9.9. 3dd203.pdf Size:151K _china

3DD209L

3DD203 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 10 W ICM 1 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 10 ℃/W IC=0.3A V(BR)CBO ICB=1mA ≥80 ≥150 ≥200 ≥250 ≥350 ≥450 V V(BR)CEO ICE=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

9.10. 3dd2073.pdf Size:144K _china

3DD209L

3DD2073 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Tc=25℃ 25 W ICM 1.5 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 4 ℃/W IC=0.8A V(BR)CBO ICB=1mA ≥150 V V(BR)CEO ICE=1mA ≥150 V V(BR)EBO IEB=1mA ≥5.0 V 直 ICBO VCB=120V ≤10 mA 流 IEBO VEB=5V ≤10 mA 参 VBEsat ≤3.0 Ic=0.5A 数 V IB=0.05

9.11. 3dd204.pdf Size:151K _china

3DD209L

3DD204 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 30 W ICM 3 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 3.33 ℃/W IC=0.6A V(BR)CBO ICE=1mA ≥100 ≥150 ≥200 ≥250 ≥300 ≥350 V V(BR)CEO ICB=1mA ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 V V(BR)EBO IEB=1mA ≥4.0 V ICBO VCB=50V ≤0.1 mA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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