2SA111 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

isc Silicon PNP Power Transistor 2SA1110DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2590Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VAL

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFEHigh VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-

isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon PNP Power Transistor 2SA1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon PNP Power Transistor 2SA1111DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY

isc Silicon PNP Power Transistor 2SA1112DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2592Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY