All Transistors. 2SA111 Datasheet

 

2SA111 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA111
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.08 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO44

 2SA111 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA111 Datasheet (PDF)

 0.1. Size:37K  no
2sa1116.pdf

2SA111

 0.2. Size:39K  no
2sa1115.pdf

2SA111

 0.3. Size:182K  jmnic
2sa1110.pdf

2SA111
2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI

 0.4. Size:146K  jmnic
2sa1116.pdf

2SA111
2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

 0.5. Size:144K  jmnic
2sa1117.pdf

2SA111
2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V

 0.6. Size:195K  jmnic
2sa1112.pdf

2SA111
2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

 0.7. Size:215K  inchange semiconductor
2sa1110.pdf

2SA111
2SA111

isc Silicon PNP Power Transistor 2SA1110DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2590Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VAL

 0.8. Size:123K  inchange semiconductor
2sa1111 2sa1112.pdf

2SA111
2SA111

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFEHigh VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-

 0.9. Size:207K  inchange semiconductor
2sa1116.pdf

2SA111
2SA111

isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 0.10. Size:207K  inchange semiconductor
2sa1117.pdf

2SA111
2SA111

isc Silicon PNP Power Transistor 2SA1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 0.11. Size:220K  inchange semiconductor
2sa1111.pdf

2SA111
2SA111

isc Silicon PNP Power Transistor 2SA1111DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY

 0.12. Size:220K  inchange semiconductor
2sa1112.pdf

2SA111
2SA111

isc Silicon PNP Power Transistor 2SA1112DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2592Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY

Datasheet: 2SA1104 , 2SA1105 , 2SA1106 , 2SA1107 , 2SA1107A , 2SA1108 , 2SA1108A , 2SA1109 , 2SD1047 , 2SA1110 , 2SA1111 , 2SA1112 , 2SA1113 , 2SA1114 , 2SA1115 , 2SA1116 , 2SA1117 .

 

 
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