All Transistors. 2SA111 Datasheet

 

2SA111 Datasheet and Replacement


   Type Designator: 2SA111
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.08 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO44
 

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2SA111 Datasheet (PDF)

 0.1. Size:37K  no
2sa1116.pdf pdf_icon

2SA111

 0.2. Size:39K  no
2sa1115.pdf pdf_icon

2SA111

 0.3. Size:182K  jmnic
2sa1110.pdf pdf_icon

2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI

 0.4. Size:146K  jmnic
2sa1116.pdf pdf_icon

2SA111

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

Datasheet: 2SA1104 , 2SA1105 , 2SA1106 , 2SA1107 , 2SA1107A , 2SA1108 , 2SA1108A , 2SA1109 , 13009 , 2SA1110 , 2SA1111 , 2SA1112 , 2SA1113 , 2SA1114 , 2SA1115 , 2SA1116 , 2SA1117 .

Keywords - 2SA111 transistor datasheet

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