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3DD313 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD313
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8 MHz
   Capacitancia de salida (Cc): 65 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

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3DD313 Datasheet (PDF)

 ..1. Size:358K  lzg
3dd313.pdf

3DD313
3DD313

2SD313(3DD313) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 60 V CEO V 5.0 V EBO I 3.0 A C I 8.0 A CPP (T =25) 1.75 W C a P (T =25) 30 W C CT 150

 9.1. Size:151K  crhj
3dd3145 a6.pdf

3DD313
3DD313

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot TC=25 50 W

 9.2. Size:153K  crhj
3dd3145 a8.pdf

3DD313
3DD313

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

 9.3. Size:153K  crhj
3dd3150 a8.pdf

3DD313
3DD313

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 9.4. Size:153K  crhj
3dd3150a8.pdf

3DD313
3DD313

NPN R 3DD3150 A8 3DD3150 A8 NPN VCEO 800 V IC 3 A Ptot W TC=25 40

 9.5. Size:148K  crhj
3dd3145a6.pdf

3DD313
3DD313

NPN R 3DD3145 A6 3DD3145 A6 NPN VCEO 600 V IC 1.3 A Ptot W TC=25 50

 9.6. Size:152K  crhj
3dd3145a8.pdf

3DD313
3DD313

NPN R 3DD3145 A8 3DD3145 A8 NPN VCEO 700 V IC 1.3 A Ptot W TC=25 60

 9.7. Size:103K  china
3dd31ct4.pdf

3DD313
3DD313

LJ2015-463DD31CT4 NPN P T =25 1 Wtot AI 3 ACI 5 ACMT 150 jmT -55~150 stgV I =1mA 100 V(BR)CBO CBV I =1mA 100 V(BR)CEO CEV I =1mA 5.0 V(BR)EBO EBI V =60V 50 ACEO CBI V =5V 0.1 mAEBO CEI =3ACV 1.2 VC

 9.8. Size:346K  lzg
3dd3150a.pdf

3DD313
3DD313

2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V

 9.9. Size:138K  lzg
3dd31a.pdf

3DD313
3DD313

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.10. Size:138K  lzg
3dd31.pdf

3DD313
3DD313

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.11. Size:138K  lzg
3dd31b.pdf

3DD313
3DD313

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

 9.12. Size:138K  lzg
3dd31c.pdf

3DD313
3DD313

TIP31(3DD31) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP32(3CD32) Features: Complement to TIP32(3CD32). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP31 40 V 5.

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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