2SA1111 Todos los transistores

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-

isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY

JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2590 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2607 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2608 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2592 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY