Биполярный транзистор 2SA1111 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1111
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 65
Корпус транзистора: TO220
2SA1111 Datasheet (PDF)
2sa1111 2sa1112.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFEHigh VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-
2sa1111.pdf
isc Silicon PNP Power Transistor 2SA1111DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
2sa1110.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI
2sa1116.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2sa1117.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V
2sa1112.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sa1110.pdf
isc Silicon PNP Power Transistor 2SA1110DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2590Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VAL
2sa1116.pdf
isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sa1117.pdf
isc Silicon PNP Power Transistor 2SA1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sa1112.pdf
isc Silicon PNP Power Transistor 2SA1112DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2592Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050