3DD5040
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD5040
Código: D5040
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 1700
V
Tensión colector-emisor (Vce): 750
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 22
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO-3P-H-IS
Búsqueda de reemplazo de transistor bipolar 3DD5040
3DD5040
Datasheet (PDF)
..1. Size:152K jilin sino
3dd5040.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY R3DD5040 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO22 A I C3 V(max) V
9.1. Size:144K jilin sino
3dd5036.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY R3DD5036 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C3 V(max) V
9.2. Size:359K jilin sino
3dd5024p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5024P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 8AIC 3V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEATU
9.3. Size:368K jilin sino
3dd5027.pdf
NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD5027 ;NSpe MAIN CHARACTERISTICS \ Package IC 3AVCEO 800VPC(TO-220) 50W(u APPLICATIONS op Energy-saving ligh
9.4. Size:213K jilin sino
3dd5032.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY R3DD5032 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BVCBO 8 A Ic 3 V(max) Vce(sat)
9.5. Size:471K jilin sino
3dd5032p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5032P Package MAIN CHARACTERISTICSTO-3P(H)IS 1500 VBVCBO 8 AIC 3 V(max)VCE(sat) 1s(max)tf APPLICATIONS Switching power Supply for color TV. FEATURE
9.6. Size:146K jilin sino
3dd5039.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY R3DD5039 \ Package ;NSpe MAIN CHARACTERISTICS TO-220HF 900 V BV CBO6 A I C1.0 V(max) V C
9.7. Size:432K jilin sino
3dd5023p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5023P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 6 AIC 5 V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEA
9.8. Size:235K jilin sino
3dd5011.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R3DD5011 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS BVCBO 900VIC 10 AVCE(sat) 0.5 V(max)
9.9. Size:481K jilin sino
3dd5038p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5038P Package MAIN CHARACTERISTICSTO-3P(H)IS 1200 VBVCBO 10 AIC 0.5 V(max)VCE(sat) 0.3s(max)tf APPLICATIONS Switching power Supply for color TV. FE
9.10. Size:528K jilin sino
3dd5017p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5017P Package MAIN CHARACTERISTICSTO-3P(H)IS 1000 VBVCBO 12 AIC 0.5 V(max)VCE(sat) 0.3 s(max)tf APPLICATIONS Switching power Supply for color TV. F
9.11. Size:147K jilin sino
3dd5038.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY R3DD5038 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO10 A I C0.5 V(max) V
9.12. Size:485K jilin sino
3dd5036p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCYR 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS1500 V BVCBO 10 A IC 3 V(max) VCE(sat) 0.6 s(max) tf APPLICATIONS Horizontal deflection output for color TV.B C E ENT
9.13. Size:207K blue-rocket-elect
3dd5023.pdf
3DD5023 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte
9.14. Size:207K blue-rocket-elect
3dd5024.pdf
3DD5024 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte
9.15. Size:153K china
3dd50.pdf
3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
9.16. Size:37K shaanxi
3dd505.pdf
Shaanxi Qunli Electric Co., Ltd 11:54:41 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,
9.17. Size:26K shaanxi
3dd507.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4
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