3DD5040 Todos los transistores

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5024P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 8A I C 3V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATU

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5032P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 8 A I C 3 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Switching power Supply for color TV. FEATURE

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5023P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 6 A I C 5 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEA

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5038P Package MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO 10 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. FE

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P Package MAIN CHARACTERISTICS TO-3P(H)IS 1000 V BV CBO 12 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. F

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 10 A I C 3 V(max) V CE(sat) 0.6 s(max) t f APPLICATIONS Horizontal deflection output for color TV. B C E ENT

3DD5023 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte

3DD5024 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

Shaanxi Qunli Electric Co., Ltd 11 54 41 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507 NPN Silicon Low Frequency High Power Transistor Features 1. Three pins isn t connected with the cover. It could be produced according to the requirement. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4