MT6L62AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MT6L62AT
Código: TF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 5 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10000 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: 2-2JA1C
Búsqueda de reemplazo de transistor bipolar MT6L62AT
MT6L62AT Datasheet (PDF)
mt6l62at.pdf
MT6L62AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AT VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Maximum Ratings (Ta == 25C) ==Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCEO 5 5 VEmitter-base voltage VEBO 1.5 2 VCollector current IC 25 40 m
mt6l62ae.pdf
MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Mounted Devices Q1 Q2Three pin SSM type part No. MT3S07S MT3S03AS Absolute Maximum Ratings (Ta = 25C) Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCE
mt6l61as.pdf
MT6L61AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L61AS VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini (6-pin) ES6 package. Mounted Devices Q1 Q2Three pin SSM type part No. MT3S07S MT3
mt6l61ae.pdf
MT6L61AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AE VHF-UHF Band Low Noise Amplifier Application Unit: mmVHF-UHF Band Oscillator Application Maximum Ratings (Ta == 25C) ==Rating Characteristics Symbol Unit Q1 Q2Collector-base voltage VCBO 10 10 VCollector-emitter voltage VCEO 5 5 VEmitter-base voltage VEBO 1.5 2 VCollector current IC 25 40 m
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: FMMT415 | MJD44H11-1 | MJ3041 | L8050SLT3G | BCV28 | K159NT1E | BCE107
History: FMMT415 | MJD44H11-1 | MJ3041 | L8050SLT3G | BCV28 | K159NT1E | BCE107
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050