2SC5487 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5487
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 5 A
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar 2SC5487
2SC5487 Datasheet (PDF)
2sc5487.pdf
Transistors22-1 Power Transistors ............................................................................................. 142-1-1 Transistors for Audio Amplifiers ................................................................ 14 Complementary Transistors for Output ......................................................... 14 Complementary Transistors for Output built-in
2sc5488.pdf
Ordering number:ENN6288NPN Epitaxial Planar Silicon Transistor2SC5488VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7GHz typ.[2SC5488] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10
2sc5488a.pdf
Ordering number : ENA1089 2SC5488ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5488AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen fr
2sc5489.pdf
Ordering number:ENN6339NPN Epitaxial Planar Silicon Transistor2SC5489VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 High cutoff frequency : fT=9.0GHz typ.[2SC5489] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.
2sc5488a.pdf
Ordering number : ENA1089A2SC5488ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SSFPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25
2sc5480.pdf
2SC5480Silicon NPN Triple DiffusedHorizntal Deflection OutputADE-208-632 (Z)1st. EditionOct. 1, 1998Features High breakdown voltageVCES = 1500 V Isolated packageTO3PFM Built-in damper diodeOutlineTO3PFMC21B1.Base32.CollectorE13.Emitter232SC5480Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to emit
2sc5482.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5485.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5480.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stageapplications.ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
