2SC5487 - описание и поиск аналогов

 ..1. Size:332K  no
 2sc5487.pdf 

Transistors 2 2-1 Power Transistors ............................................................................................. 14 2-1-1 Transistors for Audio Amplifiers ................................................................ 14 Complementary Transistors for Output ......................................................... 14 Complementary Transistors for Output built-in

 8.1. Size:34K  sanyo
 2sc5488.pdf 

Ordering number ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2159 High cutoff frequency fT=7GHz typ. [2SC5488] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0

 8.2. Size:57K  sanyo
 2sc5488a.pdf 

Ordering number ENA1089 2SC5488A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5488A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen fr

 8.3. Size:31K  sanyo
 2sc5489.pdf 

Ordering number ENN6339 NPN Epitaxial Planar Silicon Transistor 2SC5489 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2159 High cutoff frequency fT=9.0GHz typ. [2SC5489] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.

 8.4. Size:464K  onsemi
 2sc5488a.pdf 

Ordering number ENA1089A 2SC5488A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25

 8.5. Size:33K  hitachi
 2sc5480.pdf 

2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCES = 1500 V Isolated package TO 3PFM Built-in damper diode Outline TO 3PFM C 2 1 B 1.Base 3 2.Collector E 1 3.Emitter 2 3 2SC5480 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emit

 8.6. Size:105K  isahaya
 2sc5482.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 8.7. Size:100K  isahaya
 2sc5484.pdf 

 8.8. Size:89K  isahaya
 2sc5485.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.9. Size:178K  inchange semiconductor
 2sc5480.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5480 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(T