30C02S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 30C02S
Código: YM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 540 MHz
Capacitancia de salida (Cc): 3.3 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SMCP
Búsqueda de reemplazo de 30C02S
30C02S Datasheet (PDF)
30c02s.pdf

Ordering number : ENN736530C02SNPN Epitaxial Planar Silicon Transistor30C02SLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2106A[30C02S]Features0.750.3 Large current capacitance.0.63Low collector-to-emitter saturation voltage (resistance).
30c02ch.pdf

Ordering number : ENN736330C02CHNPN Epitaxial Planar Silicon Transistor30C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive.2150A[30C02CH]Features2.9 Large current capacitance.0.150.4 Low collector-to-emitter saturation voltage (resistance).
30c02ch.pdf

Ordering number : EN7363A30C02CHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single CPH3Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizatio
30c02mh 30c02mh 30c02mh 30c02mh.pdf

Ordering number : EN7364B30C02MHBipolar Transistorhttp://onsemi.com( )30V, 0.7A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifier, high-speed switching, small motor driveFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat
Otros transistores... KSB798O , KSB798Y , KSB798G , 183T2C , 2SA2122G , 2SC5487 , 2SC5996A , 2SC5996B , 2SD1555 , CH848BPTP , CH848BPTQ , CH848BPTY , CHDTC144GKPT , CHT817WPTQ , CHT817WPTR , CHT817WPTS , CHT846BPTQ .
History: DTS4010
History: DTS4010



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