30C02S Specs and Replacement
Type Designator: 30C02S
SMD Transistor Code: YM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 540 MHz
Collector Capacitance (Cc): 3.3 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SMCP
30C02S Substitution
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30C02S datasheet
Ordering number ENN7365 30C02S NPN Epitaxial Planar Silicon Transistor 30C02S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2106A [30C02S] Features 0.75 0.3 Large current capacitance. 0.6 3 Low collector-to-emitter saturation voltage (resistance). ... See More ⇒
Ordering number ENN7363 30C02CH NPN Epitaxial Planar Silicon Transistor 30C02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2150A [30C02CH] Features 2.9 Large current capacitance. 0.15 0.4 Low collector-to-emitter saturation voltage (resistance). ... See More ⇒
Ordering number EN7363A 30C02CH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat NPN Single CPH3 Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizatio... See More ⇒
30c02mh 30c02mh 30c02mh 30c02mh.pdf 
Ordering number EN7364B 30C02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat NPN Single MCPH3 Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance)) RCE(sat) typ=330m [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturizat... See More ⇒
Detailed specifications: KSB798O, KSB798Y, KSB798G, 183T2C, 2SA2122G, 2SC5487, 2SC5996A, 2SC5996B, S9018, CH848BPTP, CH848BPTQ, CH848BPTY, CHDTC144GKPT, CHT817WPTQ, CHT817WPTR, CHT817WPTS, CHT846BPTQ
Keywords - 30C02S pdf specs
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