UN5113 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UN5113  📄📄 

Código: 6C

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC70

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UN5113 datasheet

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LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors LMUN5111DW1T1G Series with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1G network consisting of two resistors; a series base resistor and a base emitter resistor. These Series digital transistors are

MOSTRAR MÁS

Otros transistores... UNR511M, UNR511N, UNR511T, UNR511V, UNR511Z, UN5110, UN5111, UN5112, S9014, UN5114, UN5115, UN5116, UN5117, UN5118, UN5119, UN511D, UN511E